Source: Global Semiconductor Watch Author: Kiki
In recent years, driven by new energy vehicles, photovoltaic, wind power and energy storage, the scale of the global power semiconductor market has been growing rapidly. Domestic power semiconductor companies represented by Shilan Microelectronics, China Resources Microelectronics, Times Electric, Anshi Semiconductor, Stargate Semiconductors, New Clean Energy, Dongwei Semiconductors and Yangjie Technology Microelectronics have grown rapidly. Recently, China Resources Microelectronics has received good news.
On December 29, according to the official official account of CR Microelectronics, CR Microelectronics Chongqing 12 inch wafer manufacturing production line and advanced power sealing and testing base were connected.
According to the public information, the total investment of CR Microelectronics Chongqing 12 inch wafer manufacturing production line project is 7.55 billion yuan. After the project is completed, it is expected to form a production capacity of 3-35000 pieces of 12 inch medium and high-end power semiconductor wafers per month, and build a supporting 12 inch epitaxial and wafer processing capacity. It is reported that from the registration of the project company, CR Microelectronics has realized the connection of all four product platforms, including medium and low voltage channel SGT MOS and high voltage super junction SJ MOS, in only 18 months. The project has entered the concurrent stage of product production and circulation and capacity construction.
In addition, China Resources Microelectronics Advanced Power Sealing and Testing Base Project is a medium and high-end power packaging project of China Resources Microelectronics. It is committed to building a special sealing and testing factory for power semiconductors focusing on the automotive electronics and industrial control market, with comprehensive domestic processes, advanced technology and leading scale, including multiple packaging and testing production lines at the module level, wafer level, frame level and panel level. The project will officially commence in November 2021; In July this year, the advanced power test base successfully capped its main body; On December 22, the first medium and low voltage SGT power device PDFN 3.3 product was successfully produced, with a yield of 99.5%. All indicators met the product specifications, and the project was successfully connected.
With the completion and operation of Runxi Microelectronics Chongqing 12 inch vehicle gauge level power device wafer production line and the supporting vehicle gauge level advanced power semiconductor sealing and testing base under CR Microelectronics, the CR Microelectronics vehicle gauge level power device industrial base has been preliminarily formed, which will continue to support the upgrading of the company‘s product application and further improve the layout in the vehicle gauge power semiconductor field.
Domestic power semiconductor dynamic frequency
In addition to China Resources Microelectronics, companies such as Microelectronics, Stargate Semiconductors, Anshi Semiconductors, Dongwei Semiconductors, and New Jieneng have made breakthroughs in high-voltage, low-voltage MOSFET and IGBT devices, and their products have come to the fore in the market.
In terms of Microelectronics, on October 24, 2022, Microelectronics released an announcement that the production line of Gallium SiC power devices of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics of Microelectronics.
In 2022, the company‘s vehicle gauge level IGBT module based on the sixth generation Trench Field Stop technology will obtain multiple platforms/project fixed-point, and the seventh generation FS Trench new generation vehicle gauge level IGBT chip benchmarking Infineon will also make breakthrough progress, further consolidating its leading position.
In terms of Anshi Semiconductor, it has continuously strengthened the layout of medium and high voltage Mosfet, compound semiconductor products SiC and GaN. In May 2022, Anshi Semiconductor has signed an agreement with Kyocera AVX Components in Salzburg, Austria, to produce GaN automobile power modules. The protocol aims to jointly develop GaN applications for electric vehicles based on new packaging technologies.
In terms of Dongwei Semiconductor, its TGBT products will go through a small batch process in the second half of 2021 and enter a rapid growth stage in 2022, becoming a new growth point of the company‘s business. It has launched high power super junction products, and has successively developed IGBT of parallel SiC and wide band gap field effect crystals. The working voltage range of existing products has covered 600V-1350V, and the working current has covered 15A-160A.
New Jieneng said in April 2022 that its silicon carbide products 1200V SiC MOSFET had been verified for the first time, and part of the product performance reached the domestic advanced level. In addition, its 600V-1350V groove type field cut-off IGBT, 500V-900V third-generation super junction power MOSFET, 30V-300V shielded gate power MOSFET, and 12V-250V groove type power MOSFET have all achieved mass production and serialization.
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