Small discrete Power MOSFET plays an important role in saving space, reducing cost and simplifying application design. In addition, higher power density can also achieve flexible wiring and reduce the overall size of the system. Infineon Technologies Co., Ltd. (FSE code: IFX/OTCQX code: IFNNY) recently launched the advanced new OptiMOS ™ Power MOSFET will further expand its product portfolio of Power MOSFET packaged with PQFN 2x2 mm2, aiming to provide a benchmark solution for the power semiconductor industry and achieve higher efficiency and better performance in a smaller package size. The new product is widely suitable for various applications, such as synchronous rectification in switching power supplies (SMPS) in servers, communication, portable chargers, and wireless chargers. In addition, the new product can also be applied to electronic speed controllers for small brushless motors in drones.
The new OptiMOS 6 40V Power MOSFET and OptiMOS 5 25V and 30V Power MOSFET further optimize the mature OptiMOS technology for high-performance design. The new product adopts ultra small PQFN 2x2 mm ² Packaging, equipped with advanced silicon technology, stable and reliable packaging, and extremely low thermal resistance (RthJC maximum value of 3.2 K/W). These new devices have extremely low conduction resistance and industry-leading performance indicators (FOMs, QG, and QOSS), enabling excellent dynamic switching performance. Therefore, these MOSFET devices with ultra-low switching losses and low conduction losses can ensure excellent energy efficiency and power density, while simplifying heat dissipation management.
The OptiMOS power switch adopts a compact PQFN 2x2 mm2 package, which can reduce system size and make the geometric shape of end user applications more compact and flexible. By reducing parallel requirements, these MOSFET devices improve the reliability of system design, significantly reducing board space and system costs.
Supply situation
The on resistance value of the new OptiMOS 6 40V Power MOSFET (ISK057N04LM6) is 5.7 m Ω, and the on resistance value of the OptiMOS 5 25V Power MOSFET (ISK024NE2LM5) and OptiMOS 5 30V Power MOSFET (ISK036N03LM5) is 2.4 m Ω and 3.6 m Ω respectively. These MOSFETs are packaged with improved PQFN 2x2 mm2.
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