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The top of the 6-inch high-end characteristic silicon-based wafer foundry project of Zhejiang Guangxin Microelectronics Co., Ltd

Views:216Time:2022-06-03
Source: Lishui release

    On May 31, the 6-inch high-end characteristic silicon wafer foundry project of Zhejiang Guangxin Microelectronics Co., Ltd. (hereinafter referred to as "Guangxin microelectronics project") located in Lishui Economic and Technological Development Zone was capped.

    Guangxin microelectronics project is the core link of the whole semiconductor industry chain - chip manufacturing. It is the first semiconductor industry project belonging to the chip manufacturing link in Lishui Economic Development Zone. It has been officially included in the construction plan of key projects in Zhejiang Province in 2022.
  Source: Lishui Economic and Technological Development Zone

    It is reported that the Guangxin microelectronics project plans to have a total investment of about 2.4 billion yuan, covering a total area of 148 mu. The construction was officially started on February 11. Up to now, the project has completed an investment of 210million yuan. Driven by the joint efforts of government and enterprises, the main structure of the project with a total construction area of 45600 square meters can be capped in only 109 days. After the project is completed and put into operation, the annual production capacity of 6-inch 2.4 million characteristic process silicon-based power semiconductor wafers and 36000 third-generation semiconductor silicon carbide wafers can be realized, with an annual output value of 3billion yuan.

    Zhejiang Guangxin Microelectronics Co., Ltd. was established on October 9, 2021. According to its official information, the company focuses on automotive electronics, energy revolution, industrial control and other application fields. The broad core microelectronics project is divided into two phases. The first phase is mainly for high-end silicon-based power semiconductor devices with 6-inch characteristic process, including IGBT, TMBs, etc.

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