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AKT2055Q

  • 20V N-channel enhancement mode MOSFET

    Features：
    Extremely Low RDS(on):
        Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
    Good stability and uniformity
    100% avalanche tested
    Excellent package for good heat dissipation
    AKT2055Q General Description：
        The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application,Power management and general purpose applications.

    AKT2055Q Features：
    Extremely Low RDS(on):
        Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
    Good stability and uniformity
    100% avalanche tested
    Excellent package for good heat dissipation

    AKT2055Q Schematic：



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