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MXD3080K

  •     These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

        These devices are well suited for high efficiency fast switching applications.
    MXD3080K Description：
        These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
        These devices are well suited for high efficiency fast switching applications.

    MXD3080K Features：
    VDS=30V, ID=80A
    RDS(ON)(Typ.)=3.7mΩ@VGS=10V
    RDS(ON)(Typ.)=6mΩ@VGS=4.5V
    Improved dv/dt capability
    100% EAS Guaranteed
    Fast switching

    MXD3080K Application：
    NB / VGA / VCORE
    POL Applications
    SMPS 2nd SR

    MXD3080K Pinout：

    MXD3080K Ordering Information：
    Part Number
    StorageTemperature
    Package
    Devices Per Reel
    MXD3080K
    -55°C to 150°C
    TO-252
    -

    咨詢：MXD3080K
    * 為必填項

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