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PED2311DN

  •     PED2311DN是VDS=18V，ID=12A，RDS(ON)<7.5mΩ@VGS=4.5V，RDS(ON)<8.6mΩ@VGS=3.8V，RDS(ON)<10mΩ@VGS=3.1V，RDS(ON)<11mΩ@VGS=2.5V的N沟道MOSFET

        PED2311DN的丝印是NC25

        PED2311DN提供DFN2x3-6L封装。


    PED2311DN概述：
        PED2311DN是VDS=18V，ID=12A，RDS(ON)<7.5mΩ@VGS=4.5V，RDS(ON)<8.6mΩ@VGS=3.8V，RDS(ON)<10mΩ@VGS=3.1V，RDS(ON)<11mΩ@VGS=2.5V的N沟道MOSFET。PED2311DN的丝印是NC25,PED2311DN提供DFN2x3-6L封装。
        The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED2311DN特性：
    VDS = 18V, ID = 12A
    RDS(ON) < 7.5mΩ @ VGS=4.5V
    RDS(ON) < 8.6mΩ @VGS=3.8V
    RDS(ON) < 10mΩ @VGS=3.1V
    RDS(ON) < 11mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2311DN应用：
    PWM applications
    Load switch
    Power management

    PED2311DN典型应用及引脚：

    咨詢：PED2311DN
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  • 上一篇：PE2300  2021/11/15
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