PED30H15G-深圳中恒科技电子有限公司

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PED30H15G

PED30H15G是VDS=30V，ID=80A，RDS(ON)<3mΩ@VGS=10V，RDS(ON)<4mΩ@VGS=4.5V的N沟道MOSFET

PED30H15G的丝印是PED30H15G

PED30H15G提供DFN5x6-8L封装。

PED30H15G 规格书下载

PED30H15G概述：

PED30H15G是VDS=30V，ID=80A，RDS(ON)<3mΩ@VGS=10V，RDS(ON)<4mΩ@VGS=4.5V的N沟道MOSFET。PED30H15G的丝印是PED30H15G，PED30H15G提供DFN5x6-8L封装。

The PED30H15G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30H15G特性：

VDS = 30V, ID = 80A

RDS(ON) < 3mΩ @ VGS=10V

RDS(ON) < 4mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PED30H15G应用：

Battery management

Motor controller and driver

PWM applications

Load switch

PED30H15G典型应用及引脚：

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