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PE8209HN

  • PE8209HN是VDS=18V，ID=9A，RDS(ON)<11mΩ，@VGS=4.5V，RDS(ON)<12mΩ，@VGS=3.8V，RDS(ON)<14mΩ，@VGS=3.1V RDS(ON)<16mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8209HN的丝印是8209.

    PE8209HN提供DFN2x3-6L封装.


    PE8209HN概述：
        PE8209HN是VDS=18V,ID=9A，RDS(ON)<11mΩ，@VGS=4.5V，RDS(ON)<12mΩ，@VGS=3.8V，RDS(ON)<14mΩ，@VGS=3.1V RDS(ON)<16mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8209HN的丝印是8209.PE8209HN提供DFN2x3-6L封装.
        The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.


    PE8209HN特性：
    VDS = 18V, ID = 9A
    RDS(ON) < 11mΩ @VGS=4.5V
    RDS(ON) < 12mΩ @VGS=3.8V
    RDS(ON) < 14mΩ @VGS=3.1V
    RDS(ON) < 16mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package


    PE8209HN应用：
    PWM applications
    Load switch
    Power management


    PE8209HN典型应用及引脚：

    咨詢：PE8209HN
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