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PE8209HM1

  •  PE8209HM1的VDS=18V，ID=10A，RDS(ON)<12mΩ，@VGS=4.5V，RDS(ON)<13mΩ，@VGS=3.8V，RDS(ON)<15.5mΩ，@VGS=3.1V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

    PE8209HM1的丝印是8209M1.

    PE8209HM1提供DFN3x3-8L封装.


    PE8209HM1概述：
        PE8209HM1的VDS=18V,ID=10A，RDS(ON)<12mΩ，@VGS=4.5V，RDS(ON)<13mΩ，@VGS=3.8V，RDS(ON)<15.5mΩ，@VGS=3.1V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
        The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.


    PE8209HM1特性：
    VDS = 18V, ID = 10A
    RDS(ON) < 12mΩ @VGS=4.5V
    RDS(ON) < 13mΩ @VGS=3.8V
    RDS(ON) < 15.5mΩ @VGS=3.1V
    RDS(ON) < 20mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package


    PE8209HM1应用：
    PWM applications
    Load switch
    Power management
    Battery protection


    PE8209HM1典型应用及引脚：

    咨詢：PE8209HM1
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