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Mosfet类
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PE58200P

  •     PE58200P是VDS=85V，ID=200A，RDS(ON)<3.2mΩ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.

        PE58200P提丝印是PE58200P.

        PE58200P提供TO-263封装.


    PE58200P概述：
        PE58200P是VDS=85V,ID=200A，RDS(ON)<3.2mΩ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200P提丝印是PE58200P.PE58200P提供TO-263封装.
        The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58200P特性：
    VDS = 85V, ID = 200A
    RDS(ON) < 3.2mΩ @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58200P应用：
    PWM applications
    Load switch
    Power management

    PE58200P典型应用及引脚：

    咨詢：PE58200P
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  • 上一篇：PE2300  2021/11/15
  • 下一篇：PE58200PA  2021/12/30

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