熱門關鍵詞：CST8002D  CST6118  CST6508  XS9971   CST118S  CST2466  矽源特科技

免費咨詢熱線：

13823783658
Mosfet类
当前位置 : Mosfet类

PE58120P

  •     PE58120P是VDS=85V，ID=120A，RDS(ON)<5.4mΩ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.

        PE58120P的丝印是PE58120P.

        PE58120P提供TO-263封装.


    PE58120P概述：
        PE58120P是VDS=85V, ID=120A，RDS(ON)<5.4mΩ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.
        The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58120P特性：
    VDS = 85V, ID = 120 A
    RDS(ON) < 5.4mΩ @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120P应用：
    PWM applications
    Load switch
    Power management

    PE58120P典型应用及引脚：

    咨詢：PE58120P
    * 為必填項

  • 上一篇：PE2300  2021/11/15
  • 下一篇：PE58120PA  2021/12/30

    • Back Top

    技術咨詢：13823783658 郵箱：Tony@ChipHomeTek.com

    商務 Q Q : 2850520718

    地址：深圳市寶安區福永懷德明禧創意園A3棟302室 A3 Building 302 Room, Huaide mingxi industry zone, Fuyong town,Baoan district,Shenzhen city

    微信公眾號

    免費咨詢熱線

    13823783658

    ©2021 深圳中恒科技电子有限公司 All rights reserved 備案號：粵ICP備19008659號