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Mosfet类
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PE58120GA

  •     PE58120GA是VDS=85V，ID=90A，RDS(ON)<6mΩ，@VGS=10V，RDS(ON)<6.5mΩ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.

        PE58120GA的丝印是PE58120G.

        PE58120GA提供DFN5x6-8L封装.


    PE58120GA概述：
        PE58120GA是VDS=85V,ID=90A，RDS(ON)<6mΩ，@VGS=10V，RDS(ON)<6.5mΩ，@VGS=8V的N-Channel Enhancement Mode Power MOSFET.PE58120GA的丝印是PE58120G.PE58120GA提供DFN5x6-8L封装.
        The PE58120GA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide 
    variety of applications.

    PE58120GA特性：
    VDS = 85V, ID = 90A
    RDS(ON) < 6mΩ @VGS=10V
    RDS(ON) < 6.5mΩ @VGS=8V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120GA应用：
    PWM applications
    Load switch
    Power management

    PE58120GA典型应用及引脚：

    咨詢：PE58120GA
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  • 上一篇：PE2300  2021/11/15
  • 下一篇：PE58120P  2021/12/30

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