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MXN2283

  •  MXN2283是VDS=-20V,ID=3.2A,RDS(ON)=68mΩ@VGS=-4.5V,RDS(ON)=95mΩ@VGS=-2.5V,RDS(ON)=140mΩ@VGS=-1.8V的Dual P-Channel MOSFET.

    MXN2283提供PDFN2x2-6L封装.

    MXN2283规格书下载

    MXN2283概述:
        MXN2283是VDS=-20V,ID=3.2A,RDS(ON)=68mΩ,@VGS=-4.5V,RDS(ON)=95mΩ,@VGS=-2.5V,RDS(ON)=140mΩ,@VGS=-1.8V的Dual P-Channel MOSFET.MXN2283提供PDFN2x2-6L封装.
        The MXN2283 uses advanced trench technology and design to provide excellent RDS(ON) low gate charge and operation with gate voltages as low as 2.5V.This device is suitable for use as a load switch or in PWM applications.

    MXN2283特性:
    VDS =-20V,ID =3.2A
    RDS(ON) = 68 m Ω @ VGS=-4.5V
    RDS(ON) = 95 m Ω @ VGS=-2.5V
    RDS(ON) = 140mΩ @ VGS=-1.8V

    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    MXN2283应用:
    PWM applications
    Load switch
    Power management

    MXN2283典型应用及引脚:

    咨詢:MXN2283
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