MXN3384规格书下载

MXN3384概述：
    MXN3384是VDS=20V，ID=6A，@VGS=4.5V，RDS(ON)(Typ.)=12.5mΩ，@VGS=3.8V，RDS(ON)(Typ.)=13mΩ，@VGS=2.5V，RDS(ON)(Typ.)=16.5mΩ的Dual N-Channe MOSFET.MXN3384提供DFN3x3-8L封装.
    The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.

MXN3384特性：
VDS =20V，ID =6A
@VGS=4.5V RDS(ON)(Typ.)=12.5mΩ
@VGS=3.8V RDS(ON)(Typ.)=13mΩ
@VGS=2.5V RDS(ON)(Typ.)=16.5mΩ
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current

MXN3384应用：
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply

MXN3384典型应用及引脚：