MXB6888规格书下载

MXB6888概述：
    MXB6888是VDS=68V,ID=80A，RDS(ON)(Typ.)=6.8mΩ，@VGS=10V的N沟道MOSFET.MXB6888提供TO-263封装.
    The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

MXB6888特性：
VDS=68V, ID=80A @ VGS=10V
RDS(ON)(Typ.)=6.8mΩ @ VGS=10V

Special Designed for E-Bike ControllerApplication
Ultra Low On-Resistance
High UIS and UIS 100% Test

MXB6888应用：
48V E-Bike Controller Applications
Hard Switched and High FrequencyCircuits
Uninterruptible Power Supply

MXB6888典型应用及引脚：