MXN3388L是20V,8A,双N沟道MOSFET,The MXN3388L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. MXN3388L丝印MXN3388L,MXN3388L提供DFN3X3-8L 封装。

MXN3388L特性：
MXN3388L提供DFN3X3-8L 封装

VDS =20V, ID =8A
RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V
RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V

RDS(ON) (Typ.)=10mΩ @ V GS =4.5V

ESD Rating: 2000V HBM

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

MXN3388L ORDERING INFORMATION:

Part Number	StorageTemperature	Package	Devices Per Reel
MXN3388L	-55°C to 150°C	DFN3X3-8L	5000

MXN3388L典型应用电路及封装图：