MX30D10是30V,10A的双N沟道MOS管，MX30D10提供SOP8封装。The MX30D10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications.

VDS =30V，ID =10A

RDS(ON)(Typ.)11.5mΩ @ Vgs=10V

RDS(ON)(Typ.)14.5mΩ @ Vgs=4.5V

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

MX30D10提供SOP8封装

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply