MXN3347概述：
MXN3347是-30V,-35A的，P沟道增强型功率MOSFET，MXN3347丝印：3347，MXN3347提供PDFN3.3x3.3-8L封装。

The MXN3347 uses advanced trench　technology to provide excellent RDS(ON), low　gate charge and operation with gate voltages　aslow as 4.5V.This device is suitable for use as　a load switch or in PWM and a wide varieer　applications.MXN3347丝印：3347，MXN3347提供PDFN3.3x3.3-8L封装

MXN3347特性：

VDS =-30V，ID =-35A

RDS(ON) (Typ.)= 9mΩ@VGS=-10V

RDS(ON) (Typ.)=13.5mΩ@VGS=-4.5V

High Power and current handing capability

Lead free product is acquired

Surface mount package

MXN3347丝印：3347

MXN3347提供PDFN3.3x3.3-8L封装

PWM applications

Load switch

Power management

MXN3347典型应用电路图