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MXN3384

  • 產品特點:
    MXN3384是VDS=20V,ID=6A,@VGS=4.5V,RDS(ON)(Typ.)=12.5mΩ,@VGS=3.8V,RDS(ON)(Typ.)=13mΩ,@VGS=2.5V,RDS(ON)(Typ.)=16.5mΩ的Dual N-Channe MOSFET.MXN3384提供DFN3x3-8L封装.
  • 咨詢熱線:13823783658
  • 產品詳情

MXN3384规格书下载


MXN3384概述:
    MXN3384是VDS=20V,ID=6A,@VGS=4.5V,RDS(ON)(Typ.)=12.5mΩ,@VGS=3.8V,RDS(ON)(Typ.)=13mΩ,@VGS=2.5V,RDS(ON)(Typ.)=16.5mΩ的Dual N-Channe MOSFET.MXN3384提供DFN3x3-8L封装.
    The MXN3384 uses advanced trench technology design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected.


MXN3384特性:
VDS =20V,ID =6A
@VGS=4.5V RDS(ON)(Typ.)=12.5mΩ
@VGS=3.8V RDS(ON)(Typ.)=13mΩ
@VGS=2.5V RDS(ON)(Typ.)=16.5mΩ
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current


MXN3384应用:
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply


MXN3384典型应用及引脚:

 

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