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Mosfet class
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PED645K

  •     PED645K是VDS=18V，ID=10A，RDS(ON)<6.5mΩ@VGS=4.5V，RDS(ON)<7mΩ@VGS=3.8V，RDS(ON<8.5mΩ@VGS=2.5V的N沟道MOSFET

        PED645K的丝印是645K

        PED645K提供DFN3x3-8L封装。


    PED645K概述：
        PED645K是VDS=18V，ID=10A，RDS(ON)<6.5mΩ@VGS=4.5V，RDS(ON)<7mΩ@VGS=3.8V，RDS(ON<8.5mΩ@VGS=2.5V的N沟道MOSFET。PED645K的丝印是645K，PED645K提供DFN3x3-8L封装。
        The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED645K特性：
    VDS = 18V, ID = 10A
    RDS(ON) < 6.5mΩ @VGS=4.5V
    RDS(ON) < 7mΩ @VGS=3.8V
    RDS(ON) < 8.5mΩ @VGS=2.5V
    ESD Rating: 2000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED645K应用：
    PWM applications
    Load switch
    Power management
    Battery protection

    PED645K典型应用及引脚：

    咨詢：PED645K
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