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PE6986E

  •     PE6986E是VDS=18V，ID=6.5A，RDS(ON)<15mΩ，@VGS=4.5V，RDS(ON)<16mΩ，@VGS=3.8V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

        PE6986E的丝印是6986E.

        PE6986E提供SOT-23-6L封装.

    PE6986E概述：
        PE6986E是VDS=18V,ID=6.5A，RDS(ON)<15mΩ，@VGS=4.5V，RDS(ON)<16mΩ，@VGS=3.8V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE6986E的丝印是6986E.PE6986E提供SOT-23-6L封装.
        The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE6986E特性：
    VDS = 18V, ID = 6.5A
    RDS(ON) < 15mΩ @ VGS=4.5V
    RDS(ON) < 16mΩ @VGS=3.8V
    RDS(ON) < 20mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE6986E应用：
    Battery Protections
    Load switch

    PE6986E典型应用及引脚：

    咨詢：PE6986E
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