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MXN2384

  •     MXN2384是VDS=20V,ID=9.5A,@VGS=4.5V,RDS(ON)(Typ.)=7.8mΩ,@VGS=4.2V,RDS(ON)(Typ.)=8mΩ,@VGS=3.8V,RDS(ON)(Typ.)=8.3mΩ,@VGS=2.5V,RDS(ON)(Typ.)=11mΩ的Dual N-Channel MOSFET.

        MXN2384的丝印是SC29.

        MXN2384提供DFN2x3-6L封装.

    MXN2384规格书下载


    MXN2384概述:
        MXN2384是VDS=20V,ID=9.5A,@VGS=4.5V,RDS(ON)(Typ.)=7.8mΩ,@VGS=4.2V,RDS(ON)(Typ.)=8mΩ,@VGS=3.8V,RDS(ON)(Typ.)=8.3mΩ,@VGS=2.5V,RDS(ON)(Typ.)=11mΩ的Dual N-Channel MOSFET.MXN2384的丝印是SC29.MXN2384提供DFN2x3-6L封装.
        The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..


    MXN2384特性:
    VDS =20V,ID =9.5A
    @VGS=4.5V RDS(ON)(Typ.)=7.8mΩ
    @VGS=4.2V RDS(ON)(Typ.)=8mΩ
    @VGS=3.8V RDS(ON)(Typ.)=8.3mΩ
    @VGS=2.5V RDS(ON)(Typ.)=11mΩ
    ESD Rating:2000V HBM

    High power and current handing capability
    Lead free product is acquired
    Surface mount package


    MXN2384应用:
    PWM applications
    Load switch


    MXN2384典型应用及引脚:

    咨詢:MXN2384
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