MXN2382规格书下载

MXN2382概述：
    MXN2382是VDS=20V，ID=8A，@VGS=4.5V，RDS(ON)(Typ.)=10mΩ，@VGS=4.2V，RDS(ON)(Typ.)=11mΩ，@VGS=3.8V，RDS(ON)(Typ.)=11.5mΩ，@VGS=2.5V，RDS(ON)(Typ.)=15mΩ的Dual N-Channe MOSFET. MXN2382的丝印是NG25.MXN2382提供DFN2x3-6L封装.
    The MXN2382 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..


MXN2382特性：
VDS =20V，ID =8A
@VGS=4.5V RDS(ON)(Typ.)=10mΩ
@VGS=4.2V RDS(ON)(Typ.)=11mΩ
@VGS=3.8V RDS(ON)(Typ.)=11.5mΩ
@VGS=2.5V RDS(ON)(Typ.)=15mΩ
ESD Rating:2000V HBM

High power and current handing capability
Lead free product is acquired
Surface mount package


MXN2382应用：
PWM applications
Load switch


MXN2382典型应用及引脚：