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MXN3016M

  •     MXN3016M是30V45A的N沟道增强型功率MOSFET

        MXN3016M丝印：3016

        MMXN3016M提供PDFN3X3-8L封装。
    MXN3016M   规格书下载

    MXN3016M概述：
    MXN3016M是30V45A的N沟道增强型功率MOSFET,MXN3016M丝印：3016M,MXN3016M提供PDFN3X3-8L封装。
    MXN3016M uses advanced trench　technology to provide excellent RDS(ON) and　low gate charge . This device　can be used for a variety of applications，VDS =30V，ID=45A，
    @VGS=10V RDS(ON)(Typ.)=5mΩ，@VGS=4.5V RDS(ON)(Typ.)=7mΩ，High density cell design for ultra low Rdson　Fully characterized Avalanche voltage and current　Good stability and uniformity with high EAS Excellent package for good heat dissipation　Special process technology for high ESD capability，MXN3016M丝印：3016M,MXN3016M提供PDFN3X3-8L封装。

    MXN3016M特性:
    VDS =30V，ID =45A
    @VGS=10V RDS(ON)(Typ.)=5mΩ
    @VGS=4.5V RDS(ON)(Typ.)=7mΩ
    High density cell design for ultra low Rdson
    Fully characterized Avalanche voltage and current
    Good stability and uniformity with high EAS Excellent package for good heat　dissipation
    Special process technology for high ESD capability
    MXN3016M丝印：3016M
    MXN3016M提供PDFN3X3-8L封装。

    MXN3016M应用：
    DC/DC Converters in Computing, Servers, and POL
    Isolated DC/DC Converters in Telecom and Industrial
    Uninterruptible Power Supply

    MXN3016M典型应用电路图：

    咨詢：MXN3016M
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